Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon
نویسندگان
چکیده
منابع مشابه
Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon
We investigated the atomic geometry, electronic band structure, and optical absorption of nitrogen hyperdoped silicon based on first-principles calculations. The results show that all the paired nitrogen defects we studied do not introduce intermediate band, while most of single nitrogen defects can introduce intermediate band in the gap. Considering the stability of the single defects and the ...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2015
ISSN: 2045-2322
DOI: 10.1038/srep10513